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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3991
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3991 2SK3991-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
FEATURES
* Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A) * Low C iss: C iss = 830 pF TYP. * 5 V drive available (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
25 20 30 120 21 1.0 150 -55 to +150 15 22.5
V V A A W W C C A mJ
(TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 12.5 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17434EJ2V0DS00 (2nd edition) Date Published February 2005 NS CP(K) Printed in Japan
The mark shows major revised points.
2005
2SK3991
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.5 A VGS = 10 V, ID = 15 A VGS = 5.0 V, ID = 15 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 15 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
2.0 5
2.5 10 10.3 17.4 830 200 140 10 9 26 10
3.0
Drain to Source On-state Resistance
13.0 30.2
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 20 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A/s
17 3 6 0.99 23 14
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D17434EJ2V0DS
2SK3991
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 PT - Total Power Dissipation - W 20 15 10 5 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
0
25
50
75
100
125
150
175
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) = 120 A ID(DC) = 30 A
ID - Drain Current - A
100
PW = 100 s
10
RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited 1 ms TC = 25C Single pulse 10 ms
1
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
rth(t) - Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125C/W 100
10 Rth(ch-C) = 5.95C/W 1
0.1 Single pulse 0.01 100
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D17434EJ2V0DS
3
2SK3991
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 150 Pulsed ID - Drain Current - A ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000 100 10 1 0.1 Tch = -55C -25C 25C 75C 125C 150C VDS = 10 V Pulsed 0 1 2 3 4 5 6
100
VGS = 10 V
50 5.0 V
0 0 1 2 3 4 5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA | yfs | - Forward Transfer Admittance - S 6 VGS(off) - Gate Cut-off Voltage - V 5 4 3 2 1 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 25 20 15 10 5 0 1 10 100 1000 ID - Drain Current - A VGS = 5.0 V
0.01
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 10
Tch = -55C -25C 25C 75C 125C 150C
1
0.1 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 ID = 15 A 10 0 0 5 10 15 20 VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
10 V
4
Data Sheet D17434EJ2V0DS
RDS(on) - Drain to Source On-state Resistance - m
2SK3991
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 40 30 VGS = 5.0 V 20 10 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF ID = 15 A Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
1000
Ciss
Coss 100 VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100 Crss
10 V
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 24 ID = 30 A 20 16 12 8 4 0 VDS VGS VDD = 20 V 12.5 V 5V 10 8 6 4 2 0 0 5 10 15 20 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns 12 VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
td(off) tf td(on) 10 tr VDD = 12.5 V VGS = 10 V RG = 10 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
IF - Diode Forward Current - A
100 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
VGS = 10 V
0V
10
di/dt = 100 A/s VGS = 0 1 1 10 IF - Diode Forward Current - A 100
Data Sheet D17434EJ2V0DS
5
2SK3991
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 0.1 1 10 25
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 12.5 V RG = 25 VGS = 20 0 V IAS 15 A
IAS = 15 A 10 VDD = 12.5 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 EAS = 22.5 mJ
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D17434EJ2V0DS
2SK3991
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Mold Area
0.7 TYP.
2) TO-252 (MP-3ZK)
2.3 0.1 0.5 0.1
6.6 0.2 5.3 TYP. 4.3 MIN.
4
4.0 MIN. 6.1 0.2
1.0 TYP.
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
1
2
3
1.8 0.2
6.10.2 10.4 MAX. (9.8 TYP.)
16.1 TYP.
4.0 MIN.
9.3 TYP.
1.14 MAX.
No Plating
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
1.14 MAX.
0.76 0.1 2.3 TYP. 2.3 TYP.
1.02 TYP.
0.760.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain)
0.5 0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
0.51 MIN.
Data Sheet D17434EJ2V0DS
7
2SK3991
* The information in this document is current as of February, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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